Electrical properties of lanthanum-scandate gate dielectric directly deposited on Ge

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 67-77

  Bera, M K ^a   Song, J ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DETERIORATION; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM; HIGH-K DIELECTRIC; INTERFACE STATES; LANTHANUM; LANTHANUM COMPOUNDS; PASSIVATION;

ANNEALING TEMPERATURES; DENSITY OF INTERFACE STATE; ELECTRICAL PERFORMANCE; HIGH- K GATE DIELECTRICS; INTERFACIAL PASSIVATION LAYERS; OUT DIFFUSION; OXIDE CHARGE TRAPPING; PASSIVATION LAYER;

MOSFET DEVICES;

EID: 76549134125     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206607     Document Type: Conference Paper

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