Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

Electronics Letters

Volumn 35, Issue 6, 1999, Pages 503-504

  Reinking, D ^a   Kammler, M ^a   Hoffmann, N ^a   Hoegen, M Horn Von ^a   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; LOW TEMPERATURE OPERATIONS; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ACTIVE AGENTS;

CHANNEL DRIFT MOBILITIES; GERMANIUM P-CHANNEL; SURFACTANT MEDIATED EPITAXY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033097369     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990349     Document Type: Article

References (5)

1. VERDONCKT-VANDEBROEK, S., CRABBÉ, E.F., MEYERSON, B.S., HARAME, D.L., RESTLE, P.J., STORK, J.M.C., and JOHNSON, J.B.: 'SiGe-channel heterojunction p-MOSFETs', IEEE Trans. Electron Devices, 1994, pp. 90-101
2. RIM, K., WELSER, J., HOYT, J.L., and GIBBONS, J.F.: 'Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs'. IEDM Tech. Dig., 1995, pp. 517-520
3. ISMAIL, K., CHU, J.O., and MEYERSON, B.S.: 'High hole mobility in SiGe alloys for device applications', Appl. Phys. Lett., 1994, 64, pp. 3124-3126
4. REINKING, D., KAMMLER, M., HORN-VON HOEGEN, M., and HOFMANN, K.R.: 'Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si', Appl. Phys. Lett., 1997, 71, pp. 924-926
5. HOFMANN, K.R., REINKING, D., KAMMLER, M., and HORN-VON HOEGEN, M.: 'Surfactant-grown low-doped germanium layers on silicon with high electron mobilities', Thin Solid Films, 1998, 321, pp. 125-130