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Volumn 46, Issue 12-16, 2007, Pages

Characteristics of ultrathin lanthanum oxide films on germanium substrate: Comparison with those on silicon substrate

Author keywords

Germanium; High k; La2O3; MOS; PDA; Post deposition annealing

Indexed keywords

EVAPORATION; GERMANIUM; SUBSTRATES; THERMAL EFFECTS;

EID: 34547883505     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L376     Document Type: Article
Times cited : (10)

References (25)
  • 18
    • 33646223121 scopus 로고    scopus 로고
    • S. Ohmi, S. Akama, A. Kikuchi, I. Kashiwagi, C. Ohshima, J. Taguchi, H. Yamamoto, C. Kobayashi, K. Sato, M. Takeda, K. Oshima, H. Ishiwara, and H. Iwai: Ext. Abstr. Int. Workshop Gate Insulator (IWGI), 2001, p. 200.
    • S. Ohmi, S. Akama, A. Kikuchi, I. Kashiwagi, C. Ohshima, J. Taguchi, H. Yamamoto, C. Kobayashi, K. Sato, M. Takeda, K. Oshima, H. Ishiwara, and H. Iwai: Ext. Abstr. Int. Workshop Gate Insulator (IWGI), 2001, p. 200.
  • 22
    • 34547903682 scopus 로고    scopus 로고
    • H. Nomura, K. Kita, K. Kyuno, and A. Toriumi: Ext. Abstr. Solid State Devices and Materials, 2005, p. 858.
    • H. Nomura, K. Kita, K. Kyuno, and A. Toriumi: Ext. Abstr. Solid State Devices and Materials, 2005, p. 858.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.