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Volumn 108, Issue 11, 2010, Pages

From amorphous to microcrystalline: Phase transition in rapid synthesis of hydrogenated silicon thin film in low frequency inductively coupled plasmas

(6) Xiao, S Q a Xu, S a Wei, D Y a Huang, S Y a Zhou, H P a Xu, Y b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b Beijing Solar Energy Research Institute (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CRYSTALLINITIES; FORMATION MECHANISM; GLASS SUBSTRATES; GRAIN SIZE; HIGH-ELECTRON-DENSITY; HYDROGEN DILUTION; HYDROGENATED MICROCRYSTALLINE SILICON; HYDROGENATED SILICON; INCUBATION LAYER; INDUCTIVELY-COUPLED; INTERMEDIATE PHASE; LOW FREQUENCY; MAXIMUM VALUES; MICROSTRUCTURE PROPERTIES; MODERATE VALUE; MULTILAYER STRUCTURES; PLASMA-SURFACE INTERACTIONS; POWER DENSITIES; RADIO FREQUENCY POWER; RAPID SYNTHESIS; RF-POWER; ROOM TEMPERATURE; SI:H THIN FILM; SILANE PRECURSOR; SILICON THIN FILM; VERTICALLY ALIGNED;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTROMAGNETIC INDUCTION; FILM PREPARATION; HYDROGENATION; INDUCTIVELY COUPLED PLASMA; METALLIC FILMS; MICROCRYSTALLINE SILICON; MULTILAYER FILMS; PHASE TRANSITIONS; PLASMA DEPOSITION; PLASMA INTERACTIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

AMORPHOUS SILICON;

EID: 78751516936 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514006 Document Type: Article

Times cited : (28)

References (35)

1
- 0035246860
- Electronic and topographic properties of amorphous and microcrystalline silicon thin films
- DOI 10.1016/S0040-6090(00)01614-X
- J. P. Kleider, C. Longeaud, R. Bruggemann, and F. Houze, Thin Solid Films 0040-6090 383, 57 (2001). 10.1016/S0040-6090(00)01614-X (Pubitemid 32263364)
- (2001) Thin Solid Films , vol.383 , Issue.1-2 , pp. 57-60
- Kleider, J.P.¹ Longeaud, C.² Bruggemann, R.³ Houze, F.⁴

2
- 0000237832
- 0003-6951,. 10.1063/1.119928
- D. V. Tsu, B. S. Chao, S. R. Ovshinsky, S. Guha, and J. Yang, Appl. Phys. Lett. 0003-6951 71, 1317 (1997). 10.1063/1.119928
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1317
- Tsu, D.V.¹ Chao, B.S.² Ovshinsky, S.R.³ Guha, S.⁴ Yang, J.⁵

3
- 6344247774
- MRS Symposia Proceedings No. 283 (Materials Research Society, Pittsburgh)
- L. Yang, L. Chen, S. Wiedemann, and A. Catalano, Microcrystalline Semiconductors: Materials Science and Devices, MRS Symposia Proceedings No. 283 (Materials Research Society, Pittsburgh, 1992), p. 462.
- (1992) Microcrystalline Semiconductors: Materials Science and Devices , pp. 462
- Yang, L.¹ Chen, L.² Wiedemann, S.³ Catalano, A.⁴

4
- 0031351332
- MRS Symposia Proceedings No. 467 (Materials Research Society, Pittsburgh)
- R. Carius, F. Finger, U. Backhausen, M. Luysberg, P. Hapke, L. Houben, M. Otte, and H. Overhof, Microcrystalline Semiconductors: Materials Science and Devices, MRS Symposia Proceedings No. 467 (Materials Research Society, Pittsburgh, 1997), p. 283.
- (1997) Microcrystalline Semiconductors: Materials Science and Devices , pp. 283
- Carius, R.¹ Finger, F.² Backhausen, U.³ Luysberg, M.⁴ Hapke, P.⁵ Houben, L.⁶ Otte, M.⁷ Overhof, H.⁸

5
- 0032068013
- 0022-3093,. 10.1016/S0022-3093(98)00329-9
- U. Kroll, J. Meier, P. Torres, J. Pohl, and A. Shah, J. Non-Cryst. Solids 0022-3093 227-230, 68 (1998). 10.1016/S0022-3093(98)00329-9
- (1998) J. Non-Cryst. Solids , vol.227-230 , pp. 68
- Kroll, U.¹ Meier, J.² Torres, P.³ Pohl, J.⁴ Shah, A.⁵

6
- 0033879621
- Intrinsic microcrystalline silicon: A new material for photovoltaics
- DOI 10.1016/S0927-0248(99)00140-3
- O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Muck, B. Rech, and H. Wagner, Sol. Energy Mater. Sol. Cells 0927-0248 62, 97 (2000). 10.1016/S0927-0248(99)00140-3 (Pubitemid 30589254)
- (2000) Solar Energy Materials and Solar Cells , vol.62 , Issue.1 , pp. 97-108
- Vetterl, O.¹ Finger, F.² Carius, R.³ Hapke, P.⁴ Houben, L.⁵ Kluth, O.⁶ Lambertz, A.⁷ Muck, A.⁸ Rech, B.⁹ Wagner, H.¹⁰

7
- 0034175250
- 1364-2812,. 10.1080/13642810008209781
- M. Vieira, A. Fantoni, M. Femandes, and R. Schwarz, Philos. Mag. B 1364-2812 80, 755 (2000). 10.1080/13642810008209781
- (2000) Philos. Mag. B , vol.80 , pp. 755
- Vieira, M.¹ Fantoni, A.² Femandes, M.³ Schwarz, R.⁴

8
- 0034175256
- 1364-2812,. 10.1080/13642810008209756
- G. Ambrosone, G. Bruno, P. Capezzuto, G. Cicala, and U. Coscia, Philos. Mag. B 1364-2812 80, 487 (2000). 10.1080/13642810008209756
- (2000) Philos. Mag. B , vol.80 , pp. 487
- Ambrosone, G.¹ Bruno, G.² Capezzuto, P.³ Cicala, G.⁴ Coscia, U.⁵

9
- 0035335474
- 1070-664X,. 10.1063/1.1343887
- S. Xu, K. N. Ostrikov, Y. Li, E. L. Tsakadze, and I. R. Jones, Phys. Plasmas 1070-664X 8, 2549 (2001). 10.1063/1.1343887
- (2001) Phys. Plasmas , vol.8 , pp. 2549
- Xu, S.¹ Ostrikov, K.N.² Li, Y.³ Tsakadze, E.L.⁴ Jones, I.R.⁵

10
- 0001031945
- 0021-8979,. 10.1063/1.1289055
- K. N. Ostrikov, S. Xu, and M. Y. Xu, J. Appl. Phys. 0021-8979 88, 2268 (2000). 10.1063/1.1289055
- (2000) J. Appl. Phys. , vol.88 , pp. 2268
- Ostrikov, K.N.¹ Xu, S.² Xu, M.Y.³

11
- 0141516660
- Ion-assisted low-temperature silicon epitaxy on randomly textured seed layers on glass
- DOI 10.1021/cg0340998
- N. P. Harder, T. Puzzer, P. I. Widenborg, S. Oelting, and A. G. Aberle, Cryst. Growth Des. 1528-7483 3, 767 (2003). 10.1021/cg0340998 (Pubitemid 37162288)
- (2003) Crystal Growth and Design , vol.3 , Issue.5 , pp. 767-771
- Harder, N.-P.¹ Puzzer, T.² Widenborg, P.I.³ Oelting, S.⁴ Aberle, A.G.⁵

12
- 0031221521
- 0021-4922,. 10.1143/JJAP.36.5436
- J. K. Rath, H. Meiling, and R. E. I. Schropp, Jpn. J. Appl. Phys., Part 1 0021-4922 36, 5436 (1997). 10.1143/JJAP.36.5436
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 5436
- Rath, J.K.¹ Meiling, H.² Schropp, R.E.I.³

13
- 0035452846
- Polycrystalline silicon film deposited by ICP-CVD
- DOI 10.1016/S0927-0248(00)00387-1, PII S0927024800003871
- B. Y. Moon, J. H. Youn, S. H. Won, and J. Jang, Sol. Energy Mater. Sol. Cells 0927-0248 69, 139 (2001). 10.1016/S0927-0248(00)00387-1 (Pubitemid 32529475)
- (2001) Solar Energy Materials and Solar Cells , vol.69 , Issue.2 , pp. 139-145
- Byeong Yeon Moon¹ Jae Hyoung Youn² Sung Hwan Won³ Jang, J.⁴

14
- 0022733729
- EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN SPECTRA OF CRYSTALLINE SEMICONDUCTORS
- DOI 10.1016/0038-1098(86)90513-2
- H. Campbell and P. M. Fauchet, Solid State Commun. 0038-1098 58, 739 (1986). 10.1016/0038-1098(86)90513-2 (Pubitemid 16591424)
- (1986) Solid State Communications , vol.58 , Issue.10 , pp. 739-741
- Campbell, I.H.¹ Fauchet, P.M.²

15
- 0019602990
- ONE PHONON RAMAN SPECTRUM IN MICROCRYSTALLINE SILICON
- DOI 10.1016/0038-1098(81)90337-9
- H. Richter, Z. Wang, and L. Ley, Solid State Commun. 0038-1098 39, 625 (1981). 10.1016/0038-1098(81)90337-9 (Pubitemid 12431419)
- (1981) Solid State Communications , vol.39 , Issue.5 , pp. 625-629
- Richter, H.¹ Wang, Z.P.² Ley, L.³

16
- 0000172317
- 0003-6951,. 10.1063/1.93133
- R. Tsu, J. Gonzalez-Hernadez, S. S. Chao, S. C. Lee, and K. Tanaka, Appl. Phys. Lett. 0003-6951 40, 534 (1982). 10.1063/1.93133
- (1982) Appl. Phys. Lett. , vol.40 , pp. 534
- Tsu, R.¹ Gonzalez-Hernadez, J.² Chao, S.S.³ Lee, S.C.⁴ Tanaka, K.⁵

17
- 0035874163
- Optical emission spectroscopy study toward high rate growth of microcrystalline silicon
- DOI 10.1016/S0040-6090(00)01677-1, PII S0040609000016771
- Y. Fukuda, Y. Sakuma, C. Fukai, Y. Fujimura, K. Azuma, and H. Shirai, Thin Solid Films 0040-6090 386, 256 (2001). 10.1016/S0040-6090(00)01677-1 (Pubitemid 32277372)
- (2001) Thin Solid Films , vol.386 , Issue.2 , pp. 256-260
- Fukuda, Y.¹ Sakuma, Y.² Fukai, C.³ Fujimura, Y.⁴ Azuma, K.⁵ Shirai, H.⁶

18
- 0036607883
- Effects of substrate temperature on structural properties of undoped silicon thin films
- DOI 10.1063/1.1474611
- C. Das, A. Dasgupta, S. C. Saha, and S. Ray, J. Appl. Phys. 0021-8979 91, 9401 (2002). 10.1063/1.1474611 (Pubitemid 34638071)
- (2002) Journal of Applied Physics , vol.91 , Issue.11 , pp. 9401
- Das, C.¹ Dasgupta, A.² Saha, S.C.³ Ray, S.⁴

19
- 38649098153
- 0927-0248,. 10.1016/j.solmat.2007.11.002
- D. Y. Song, E. C. Cho, G. Conibeer, C. Flynn, Y. D. Huang, and M. A. Green, Sol. Energy Mater. Sol. Cells 0927-0248 92, 474 (2008). 10.1016/j.solmat.2007.11.002
- (2008) Sol. Energy Mater. Sol. Cells , vol.92 , pp. 474
- Song, D.Y.¹ Cho, E.C.² Conibeer, G.³ Flynn, C.⁴ Huang, Y.D.⁵ Green, M.A.⁶

20
- 61749090700
- 1528-7483,. 10.1021/cg800112d
- Y. Chen, Q. Zhou, X. Zhang, Y. Su, C. Jia, Q. Li, and W. Kong, Cryst. Growth Des. 1528-7483 9, 728 (2009). 10.1021/cg800112d
- (2009) Cryst. Growth Des. , vol.9 , pp. 728
- Chen, Y.¹ Zhou, Q.² Zhang, X.³ Su, Y.⁴ Jia, C.⁵ Li, Q.⁶ Kong, W.⁷

21
- 21544472972
- 0021-8979,. 10.1063/1.349732
- H. Kakinuma, M. Mohri, M. Sakamato, and T. Tsuruoka, J. Appl. Phys. 0021-8979 70, 7374 (1991). 10.1063/1.349732
- (1991) J. Appl. Phys. , vol.70 , pp. 7374
- Kakinuma, H.¹ Mohri, M.² Sakamato, M.³ Tsuruoka, T.⁴

22
- 0007947027
- 0040-6090,. 10.1016/S0040-6090(98)01166-3
- S. Ray, S. Mukhopadhyay, S. C. Saha, and S. Hazra, Thin Solid Films 0040-6090 337, 7 (1999). 10.1016/S0040-6090(98)01166-3
- (1999) Thin Solid Films , vol.337 , pp. 7
- Ray, S.¹ Mukhopadhyay, S.² Saha, S.C.³ Hazra, S.⁴

23
- 0037399416
- 0927-0248,. 10.1016/S0927-0248(02)00258-1
- J. K. Rath, Sol. Energy Mater. Sol. Cells 0927-0248 76, 431 (2003). 10.1016/S0927-0248(02)00258-1
- (2003) Sol. Energy Mater. Sol. Cells , vol.76 , pp. 431
- Rath, J.K.¹

24
- 35348842054
- Study on the initial growth process of crystalline silicon films on aluminum-coated polyethylene napthalate by Raman spectroscopy
- DOI 10.1016/j.jcrysgro.2007.08.027, PII S0022024807007452
- J. Li, J. Wang, M. Yin, P. Gao, D. He, Q. Chen, Y. Li, and H. Shirai, J. Cryst. Growth 0022-0248 308, 330 (2007). 10.1016/j.jcrysgro.2007.08.027 (Pubitemid 47575557)
- (2007) Journal of Crystal Growth , vol.308 , Issue.2 , pp. 330-333
- Li, J.¹ Wang, J.² Yin, M.³ Gao, P.⁴ He, D.⁵ Chen, Q.⁶ Li, Y.⁷ Shirai, H.⁸

25
- 33847275147
- 2 discharges
- DOI 10.1088/0963-0252/16/1/011, PII S0963025207288383, 011
- B. Strahm, A. A. Howling, L. Sansonnens, and C. H. Hollenstein, Plasma Sources Sci. Technol. 0963-0252 16, 80 (2007). 10.1088/0963-0252/16/1/011 (Pubitemid 46485486)
- (2007) Plasma Sources Science and Technology , vol.16 , Issue.1 , pp. 80-89
- Strahm, B.¹ Howling, A.A.² Sansonnens, L.³ Hollenstein, Ch.⁴

26
- 2942534382
- 0022-3093,. 10.1016/j.jnoncrysol.2004.02.012
- A. Matsuda, J. Non-Cryst. Solids 0022-3093 338-340, 1 (2004). 10.1016/j.jnoncrysol.2004.02.012
- (2004) J. Non-Cryst. Solids , vol.338-340 , pp. 1
- Matsuda, A.¹

27
- 17744412036
- Time-resolved layer thickness behavior of microcrystalline and amorphous silicon samples after switching on a hydrogen/silane VHF plasma
- DOI 10.1016/S0022-3093(01)01177-2, PII S0022309301011772, Suppl. 1
- R. Terasa, M. Albert, J. W. Bartha, H. Brechtel, and A. Kottwitz, J. Non-Cryst. Solids 0022-3093 299-302, 58 (2002). 10.1016/S0022-3093(01)01177-2 (Pubitemid 34473238)
- (2002) Journal of Non-Crystalline Solids , vol.299-302 , Issue.PART 1 , pp. 58-62
- Terasa, R.¹ Albert, M.² Bartha, J.W.³ Brechtel, H.⁴ Kottwitz, A.⁵

28
- 0034272634
- 0734-2101,. 10.1116/1.1286142
- S. Xu, K. N. Ostrikov, W. Luo, and S. J. Lee, J. Vac. Sci. Technol. A 0734-2101 18, 2185 (2000). 10.1116/1.1286142
- (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 2185
- Xu, S.¹ Ostrikov, K.N.² Luo, W.³ Lee, S.J.⁴

29
- 55349092356
- 1613-6810,. 10.1002/smll.200800278
- U. Cvelbar, Z. Chen, M. K. Sunkara, and M. Mozetic, Small 1613-6810 4, 1610 (2008). 10.1002/smll.200800278
- (2008) Small , vol.4 , pp. 1610
- Cvelbar, U.¹ Chen, Z.² Sunkara, M.K.³ Mozetic, M.⁴

30
- 0001237961
- 0003-6951,. 10.1063/1.98165
- J. Perrin and T. Broekhuizen, Appl. Phys. Lett. 0003-6951 50, 433 (1987). 10.1063/1.98165
- (1987) Appl. Phys. Lett. , vol.50 , pp. 433
- Perrin, J.¹ Broekhuizen, T.²

31
- 13744253789
- Thin-film silicon - Growth process and solar cell application
- DOI 10.1143/JJAP.43.7909
- A. Matsuda, Jpn. J. Appl. Phys. 43, 7909 (2004). 10.1143/JJAP.43.7909 (Pubitemid 40238081)
- (2004) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.43 , Issue.12 , pp. 7909-7920
- Matsuda, A.¹

32
- 0026120313
- Surface reactions during the a-Si. H growth in the diode and triode glow-discharge reactors
- DOI 10.1016/0039-6028(91)90166-P
- J. I. Guizot, K. Nomoto, and A. Matsuda, Surf. Sci. 0039-6028 244, 22 (1991). 10.1016/0039-6028(91)90166-P (Pubitemid 21684814)
- (1991) Surface Science , vol.244 , Issue.1-2 , pp. 22-38
- Guizot, J.-L.¹ Nomoto, K.² Matsuda, A.³

33
- 13744260705
- A highly stabilized hydrogenated amorphous silicon film having very low hydrogen concentration and an improved Si bond network
- DOI 10.1063/1.1846132, 033522
- S. Shimizu, M. Kondo, and A. Matsuda, J. Appl. Phys. 0021-8979 97, 033522 (2005). 10.1063/1.1846132 (Pubitemid 40238052)
- (2005) Journal of Applied Physics , vol.97 , Issue.3 , pp. 0335221-0335224
- Shimizu, S.¹ Kondo, M.² Matsuda, A.³

34
- 0034295431
- 0741-3335,. 10.1088/0741-3335/42/10/201
- C. H. Hollenstein, Plasma Phys. Controlled Fusion 0741-3335 42, R93 (2000). 10.1088/0741-3335/42/10/201
- (2000) Plasma Phys. Controlled Fusion , vol.42 , pp. 93
- Hollenstein, C.H.¹

35
- 51649093713
- 0022-0248,. 10.1016/j.jcrysgro.2008.07.052
- J. Li, J. Wang, M. Yin, P. Gao, Q. Chen, Y. Li, and D. He, J. Cryst. Growth 0022-0248 310, 4340 (2008). 10.1016/j.jcrysgro.2008.07.052
- (2008) J. Cryst. Growth , vol.310 , pp. 4340
- Li, J.¹ Wang, J.² Yin, M.³ Gao, P.⁴ Chen, Q.⁵ Li, Y.⁶ He, D.⁷

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