Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Zhu, Dandan ^a   McAleese, Clifford ^a   Häberlen, Maik ^a   Salcianu, Carmen ^a   Thrush, Ted ^a   Kappers, Menno ^a   Phillips, Andrew ^a   Lane, Penelope ^b   Kane, Michael ^b   Wallis, David ^b   Martin, Trevor ^b   Astles, Mike ^b   Hylton, Nicolas ^c   Dawson, Phil ^c   Humphreys, Colin ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EFFICIENCY MEASUREMENT; EXTRACTION EFFICIENCIES; FORWARD BIAS VOLTAGE; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LED DEVICE; LED STRUCTURE; LIGHT OUTPUT POWER; LIGHT-EMITTING DIODE STRUCTURES; MAXIMUM VALUES; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTIPLE QUANTUM WELLS; OPTICAL EFFICIENCY; OUTPUT COUPLING; PLANAR DEVICES; QUANTUM WELL; RADIATIVE EFFICIENCY; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI SUBSTRATES; SI(111) SUBSTRATE; SILICON SUBSTRATES; STRUCTURAL QUALITIES;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; ELECTROLUMINESCENCE; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

QUANTUM EFFICIENCY;

EID: 78751491230     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530602     Document Type: Article

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