GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2086-2088

  Ishikawa, H ^a   Jimbo, T ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DBR; LATTICE-MATCHED; LIGHT OUTPUT POWER; SI SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS; ELECTROLUMINESCENCE; LIGHT EMISSION; NITRIDES; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

LIGHT EMITTING DIODES;

EID: 77951222991     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778441     Document Type: Conference Paper

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