Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Fenwick, William E ^a   Melton, Andrew ^a   Xu, Tianming ^a,b   Li, Nola ^a   Summers, Christopher ^c   Jamil, Muhammad ^a   Ferguson, Ian T ^a,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK FREE; CURRENT DENSITY MEASUREMENTS; EMISSION WAVELENGTH; GAN LIGHT-EMITTING DIODES; HIGH DRIVE CURRENT; HIGHER EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; LUMINESCENCE INTENSITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE CHARACTERISTICS; SAPPHIRE SUBSTRATES; SI (1 1 1); SI(111) SUBSTRATE;

CORUNDUM; CRACKING (CHEMICAL); CRACKS; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; LIGHT; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; OZONE WATER TREATMENT; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; TENSILE STRAIN; VAPOR DEPOSITION; VAPORS;

GALLIUM ALLOYS;

EID: 66749124681     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148328     Document Type: Article

References (13)

1. LEDs Magazine, edited by, T. Whitaker, (Cabot Media, Bristol, 2007), p. 38.
2. A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken, and A. Krost, Jpn. J. Appl. Phys., Part 2 0021-4922 39, L1183 (2000). 10.1143/JJAP.39.L1183
3. S. D. Hersee, D. Zubia, X. Sun, R. Bommena, M. Fairchild, S. Zhang, D. Burckel, A. Frauenglass, and S. R. J. Brueck, IEEE J. Quantum Electron. 0018-9197 38, 1017 (2002). 10.1109/JQE.2002.800987
4. E. Arslan, M. K. Ozturk, A. Teke, S. Ozcelik, and E. Ozbay, J. Phys. D 0022-3727 41, 155317 (2008). 10.1088/0022-3727/41/15/155317
5. B. H. Bairamov, O. Gürdal, A. Botchkarev, H. Morko, G. Irmer, and J. Monecke, Phys. Rev. B 0163-1829 60, 16741 (1999). 10.1103/PhysRevB.60.16741
6. G. Cong, Y. Lu, W. Peng, X. Liu, X. Wang, and Z. Wang, J. Cryst. Growth 0022-0248 276, 381 (2005). 10.1016/j.jcrysgro.2004.11.419
7. K. Cheng, M. Leys, S. Degroote, M. Germain, and G. Borghs, Appl. Phys. Lett. 0003-6951 92, 192111 (2008). 10.1063/1.2928224
8. M. -H. Kim, Y. -G. Do, H. C. Kang, D. Y. Noh, and S. -J. Park, Appl. Phys. Lett. 0003-6951 79, 2713 (2001). 10.1063/1.1412824
9. W. E. Fenwick, M. Jamil, N. Li, T. Xu, A. Melton, S. -J. Wang, H. Yu, C. J. Summers, and I. T. Ferguson (unpublished).
10. A. Yamamoto, T. Tanikawa, B. K. Ghosh, Y. Hamano, A. Hashimoto, and Y. Ito, Phys. Status Solidi C 1610-1634 0, 2562 (2003). 10.1002/pssc.200303502
11. A. Dadgar, M. Poschenrieder, J. Bläsing, K. Fehse, A. Diez, and A. Krost, Appl. Phys. Lett. 0003-6951 80, 3670 (2002). 10.1063/1.1479455
12. C. Mo, W. Fang, Y. Pu, H. Liu, and F. Jiang, J. Cryst. Growth 0022-0248 285, 312 (2005). 10.1016/j.jcrysgro.2005.08.046
13. B. Zhang, T. Egawa, H. Ishikawa, Y. Liu, and T. Jimbo, Jpn. J. Appl. Phys., Part 2 0021-4922 42, L226 (2003). 10.1143/JJAP.42.L226