High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 725-730

  Zhang, Baoshun ^a   Liang, Hu ^a   Wang, Yong ^a   Feng, Zhihong ^a   Ng, Kar Wei ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitride; B2. Semiconductor III V materials; B3. Light emitting diodes

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RESIDUAL STRESSES; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; PATTERNED SI SUBSTRATES; SEMICONDUCTOR III-V MATERIALS;

LIGHT EMITTING DIODES;

EID: 33846462085     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.170     Document Type: Article

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