GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7231, Issue , 2009, Pages

  Zhu, D ^a   McAleese, C ^a   McLaughlin, K K ^a   Haberlen M ^a   Salcianua, C O ^a   Thrush, E J ^a   Kappers, M J ^a   Phillips, W A ^a   Lane, P ^b   Wallis, D J ^b   Martin, T ^b   Astles, M ^b   Thomas, S ^c   Pakes, A ^c   Heuken, M ^c   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c AIXTRON Nanoinstruments Ltd   (United Kingdom)

Author keywords

GaN; LED; MOVPE; Si

Indexed keywords

ALGAN; CRACK-FREE; DIFFERENTIAL THERMAL EXPANSIONS; FORWARD-BIAS VOLTAGES; GAN; GAN-BASED LEDS; GAN-BASED STRUCTURES; IN-SITU OPTICAL MONITORING; ISSUES AND CHALLENGES; LED; LED DEVICES; LED STRUCTURES; MOVPE; NON-UNIFORMITIES; NUCLEATION LAYERS; ON WAFERS; REAL TIME; SI; SI SUBSTRATES; SI(111) SUBSTRATES; STRESS MANAGEMENTS;

CURRENT DENSITY; ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHTING; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SOLID STATE DEVICES; SUBSTRATES; THERMAL EXPANSION;

GALLIUM ALLOYS;

EID: 63449111604     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814919     Document Type: Conference Paper

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