Properties of thermal gadolinium oxide films on silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 3205-3208

  Ko, Hong Hsi ^a   Chang, Liann Be ^b   Jeng, Ming Jer ^c   Kuei, Ping Yu ^a   Horng, Kuo Yang ^d  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c ST JOHN'S UNIVERSITY   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Gadolinium (Gd) oxide film; Grain boundary; Leakage property; Thermal oxidation; X ray diffraction (XRD)

Indexed keywords

CAPACITANCE; GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; OXIDATION; OXIDES; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE CONTROL; X RAY DIFFRACTION;

GADOLINIUM (GD) OXIDE FILM; INTERFACIAL LAYERS; LEAKAGE PROPERTY; THERMAL OXIDATION;

GADOLINIUM COMPOUNDS;

EID: 22544464986     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3205     Document Type: Article

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