Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation

Electronics Letters

Volumn 39, Issue 5, 2003, Pages 421-422

  Yang, C W ^a   Fang, Y K ^a   Chen, S F ^a   Lin, C Y ^a   Wang, M F ^b   Lin, Y M ^b   Hou, T H ^b   Yao, L G ^b   Chen, S C ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Science Based Industrial Park   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PERMITTIVITY; POLYSILICON; QUANTUM THEORY; SILICA; THERMODYNAMIC STABILITY;

FLATBAND VOLTAGE;

MOS CAPACITORS;

EID: 0037422086     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030278     Document Type: Article

References (10)

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8. LO, S.-H., BUCHANAN, D.A., and TAUR, Y.: 'Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides', IBM J. Res. Dev., 1999, 43, (3), pp. 327-337
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