Suppression of silicidation in ZrO2/SiO2/Si structure by helium annealing

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4171-4173

  Muraoka, Kouichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; HELIUM; PARTIAL PRESSURE; QUENCHING; SILICA; THERMODYNAMIC STABILITY;

SILICIDATION;

ZIRCONIUM COMPOUNDS;

EID: 0037175878     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525393     Document Type: Article

References (14)

1. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
2. T.S. Jeon, J.M. White, and D.L. Kwong, Appl. Phys. Lett. 78, 368 (2001).
3. H. Watanabe, Appl. Phys. Lett. 78, 3803 (2001).
4. G.D. Wilk, R.M. Wallace, and J.M. Anthony, J. Appl. Phys. 89, 5243 (2001).
5. J.-P. Maria, D. Wicaksana, A.I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys. 90, 3476 (2001).
6. H. Watanabe and N. Ikarashi, Appl. Phys. Lett. 80, 559 (2002).
7. K. Muraoka, Appl. Phys. Lett. 80, 4516 (2002).
8. K.J. Hubbard and D.G. Schlom, J. Mater. Res. 11, 2757 (1996).
9. A. Stesmans, V.V. Afanas'ev, and A.G. Revesz, Appl. Phys. Lett. 74, 1466 (1999).
10. V.V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 74, 1009 (1999).
11. V.V. Afanas'ev and A. Stesmans, J. Appl. Phys. 87, 7338 (2000).
12. S. Iwata and A. Ishizuka, J. Appl. Phys. 79, 6653 (1996); K. Muraoka and S. Inumiya, in Extended Abstracts of the 6th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides, JSAP Catalog No. AP012202, 2001, p. 187.
13. S. Iwata and A. Ishizuka, J. Appl. Phys. 79, 6653 (1996); K. Muraoka and S. Inumiya, in Extended Abstracts of the 6th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides, JSAP Catalog No. AP012202, 2001, p. 187.
14. Z.H. Lu, J.P. McCaffrey, B. Brar, G.D. Wilk, R.M. Wallace, L.C. Feldman, and S.P. Tay, Appl. Phys. Lett. 71, 2764 (1997).