Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

Nanotechnology

Volumn 21, Issue 47, 2010, Pages

  Bollani, M ^a   Chrastina, D ^a   Fedorov, A ^a   Sordan, R ^a   Picco, A ^b   Bonera, E ^b  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM DIFFUSION LENGTH; CHEMICAL VAPOUR DEPOSITION; EPITAXIAL DEPOSITION; GE CONTENT; GE FILMS; HIGH GROWTH RATE; ISLAND MORPHOLOGIES; LOW STRAINS; LOW TEMPERATURES; LOW-ENERGY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION; PATTERNED SUBSTRATES; POTENTIAL APPLICATIONS; SI SUBSTRATES; SUBSTRATE PATTERN; UNIFORM DISTRIBUTION;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; EPITAXIAL FILMS; MICROELECTRONICS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES;

GERMANIUM;

EID: 78650165363     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/47/475302     Document Type: Article

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