Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

Journal of Physics D: Applied Physics

Volumn 43, Issue 46, 2010, Pages

  Kim, Se Hyun ^a   Yun, Won Min ^a   Kwon, Oh Kwan ^a   Hong, Kipyo ^a   Yang, Chanwoo ^a   Choi, Woon Seop ^b   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hoseo University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKED; DEVICE OPERATIONS; DIELECTRIC THICKNESS; FIELD-EFFECT MOBILITIES; GATE BIAS; HIGH DIELECTRIC CONSTANTS; HYSTERESIS BEHAVIOUR; IONIC IMPURITY; LOW VOLTAGES; LOW-VOLTAGE; MORPHOLOGICAL FEATURES; PENTACENE LAYERS; PENTACENES; POLYMER GATE DIELECTRICS; SOLVENT MOLECULES; SWEEP RATES;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HYSTERESIS; ORGANIC FIELD EFFECT TRANSISTORS; POLYSTYRENES; SURFACE PROPERTIES;

GATE DIELECTRICS;

EID: 78650093234     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/46/465102     Document Type: Article

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