High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Yoo, Byungwook ^a   Jung, Taeho ^a   Basu, Debarshi ^a   Dodabalapur, Ananth ^a   Jones, Brooks A ^b   Facchetti, Antonio ^b   Wasielewski, Michael R ^b   Marks, Tobin J ^b  

^a The University of Texas at Austin   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC SURFACE TREATMENT; ELECTRICAL CHARACTERISTICS; HEXAMETHYLDISILAZANE; SUBTHRESHOLD SWING;

ELECTROMAGNETIC WAVE PROPAGATION; FIELD EFFECT TRANSISTORS; IONS; ORGANIC CONDUCTORS; OSCILLATORS (ELECTRONIC); SURFACE TREATMENT; THRESHOLD VOLTAGE;

HOLE MOBILITY;

EID: 33644542734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177627     Document Type: Article

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