Surface potential control of an insulator layer for the high performance organic FET

Synthetic Metals

Volumn 137, Issue 1-3, 2003, Pages 967-968

  Yoshida, M ^a   Uemura, S ^a   Kodzasa, T ^a   Kamata, T ^a   Matsuzawa, M ^b   Kawai, T ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Insulating films; Organic FET; Polycrystalline thin films; Semiconductor insulator interfaces; Surface potential control

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFUSION; INTERFACIAL ENERGY; POLYCRYSTALLINE MATERIALS; POLYMERS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; SURFACE TREATMENT; THIN FILMS;

SURFACE POTENTIAL;

FIELD EFFECT TRANSISTORS;

EID: 0037419103     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)00958-X     Document Type: Conference Paper

References (2)

1. H. Sirringhaus, T. Kawase, R.H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E.P. Woo, Science, 290 (2000) 2123.
2. H. Sirringhaus, R.J. Wilson, R.H. Friend, M. Inbasekaran, W. Wu, E.P. Woo, M. Grell and D.D.C. Bradley, Appl. Phys. Lett., 77 (2000) 406.