Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Kim, Se Hyun ^a   Nam, Sooji ^a   Jang, Jaeyoung ^a   Hong, Kipyo ^a   Yang, Chanwoo ^a   Chung, Dae Sung ^a   Park, Chan Eon ^a   Choi, Woon Seop ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hoseo University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT AIR; BI-LAYER; DIELECTRIC STRUCTURE; ELECTRICAL CHARACTERIZATION; END-FUNCTIONALITY; HYDROXYL GROUPS; HYSTERESIS BEHAVIOR; IN-VACUUM; ORGANIC FIELD-EFFECT TRANSISTORS; PENTACENE; POLYMER GATE DIELECTRICS; POLYMER SURFACES; RELATIVE HUMIDITIES; SEMICONDUCTOR LAYERS; SINGLE POLYMERS; ULTRA-THIN;

ADSORPTION; ATMOSPHERIC HUMIDITY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FUNCTIONAL POLYMERS; GATES (TRANSISTOR); HUMIDITY CONTROL; HYDROPHOBICITY; HYSTERESIS; MOS CAPACITORS; POLYMERS; SILICON COMPOUNDS; SURFACE DIFFUSION;

GATE DIELECTRICS;

EID: 66549118442     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3131664     Document Type: Article

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