Electric-field-induced cap states in pentacene

Advanced Materials

Volumn 21, Issue 24, 2009, Pages 2511-2515

  Knipp, Dietmar ^a   Northrup, John E ^b  

^a JACOBS UNIVERSITY BREMEN   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODELS; CUTOFF ENERGIES; DOPING EFFECTS; GAP STATE; HEXAMETHYLDISILAZANE; OPTICAL LITHOGRAPHY; ORGANIC SEMICONDUCTOR; PENTACENE; PLANE WAVE BASIS; POTENTIAL DENSITY; PSEUDOPOTENTIALS; SILICON OXIDE LAYERS; SOURCE CONTACT; THERMAL OXIDES; TOTAL ENERGY;

ATOMS; GATE DIELECTRICS; GATES (TRANSISTOR); LOCAL DENSITY APPROXIMATION; PHOTOLITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SILICON OXIDES; THIN FILM TRANSISTORS;

DENSITY FUNCTIONAL THEORY;

EID: 67649344784     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200802173     Document Type: Article

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