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Volumn 519, Issue 5, 2010, Pages 1655-1661
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Stress and microstructure evolution during growth of magnetron-sputtered low-mobility metal films: Influence of the nucleation conditions
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Author keywords
Coherence stress; Crystallization; In situ wafer curvature; Interfaces
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Indexed keywords
ALLOY FILM;
AMORPHOUS LAYER;
AMORPHOUS SI;
COHERENCE STRESS;
CRITICAL FILM THICKNESS;
CRYSTALLINE TRANSITION;
DENSIFICATION STRAIN;
FILM MICROSTRUCTURES;
GRAIN SIZE;
IN-PLANE GRAIN SIZE;
IN-SITU;
INTERFACES;
LOW-MOBILITY;
METAL FILM;
MICROSTRUCTURE EVOLUTIONS;
STEADY STATE STRESS;
STRESS BEHAVIOUR;
STRESS EVOLUTION;
UNDERLAYERS;
WAFER CURVATURE TECHNIQUE;
WORKING PRESSURES;
AMORPHOUS SILICON;
CRYSTALLINE MATERIALS;
CRYSTALLIZATION;
GRAIN SIZE AND SHAPE;
LATTICE MISMATCH;
MAGNETRONS;
METALLIC FILMS;
MICROSTRUCTURAL EVOLUTION;
NUCLEATION;
SILICON ALLOYS;
SILICON COMPOUNDS;
SILICON WAFERS;
TENSILE STRESS;
AMORPHOUS FILMS;
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EID: 78649754144
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.07.091 Document Type: Conference Paper |
Times cited : (52)
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References (40)
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