Measuring Ge segregation by real-time stress monitoring during S1-xGex molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3830-3832

  Floro, J A ^a   Chason, E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001712789     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117119     Document Type: Article

References (21)

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16. We have ignored the concentration dependence of the biaxial modulus. Also, the Ge fraction is properly given by the ratio of the deposition fluxes rather than the rates. These approximations produce less than 10% error.
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21. Note that our definition of surface stress differs from that in Refs. 17, 18, and 20, which implicitly incorporate the lattice coherency stress into a net "surface stress."