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Volumn 518, Issue 15, 2010, Pages 4087-4090

A structure zone diagram including plasma-based deposition and ion etching

Author keywords

Homologous temperature; Ion etching; Morphology; Plasma assistance; Potential and kinetic energy; Stress; Structure zone diagram; Thin film deposition

Indexed keywords

CATHODIC ARC; EXTENDED STRUCTURES; FLUX OF IONS; GROWTH CONDITIONS; HIGH-POWER; HOMOLOGOUS TEMPERATURE; ION ETCHING; PHYSICAL PARAMETERS; THIN-FILM DEPOSITIONS;

EID: 77953163625     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.145     Document Type: Article
Times cited : (725)

References (39)
  • 8
    • 0032108846 scopus 로고    scopus 로고
    • Musil J. Vacuum 50 (1998) 363
    • (1998) Vacuum , vol.50 , pp. 363
    • Musil, J.1
  • 27
    • 0003401326 scopus 로고    scopus 로고
    • Hopwood J.A. (Ed), Academic Press, San Diego, CA
    • In: Hopwood J.A. (Ed). Ionized Physical Vapor Deposition (2000), Academic Press, San Diego, CA
    • (2000) Ionized Physical Vapor Deposition


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.