Influence of phase transformation on stress evolution during growth of metal thin films on silicon

Physical Review Letters

Volumn 104, Issue 9, 2010, Pages

  Fillon, A ^a   Abadias, G ^a   Michel, A ^a   Jaouen, C ^a   Villechaise, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY CRYSTALLIZATION; AMORPHOUS SI; CONCENTRATION-DEPENDENT; CRITICAL THICKNESS; GRAIN SIZE; IN-SITU STRESS MEASUREMENT; INTERFACE REACTIVITY; LOW MOBILITY; METAL FILM; METAL THIN FILM; PHASE TRANSFORMATION; STRESS EVOLUTION; TWO-DIMENSIONAL GROWTH; VOLUME CHANGE;

AMORPHOUS SILICON; EPITAXIAL GROWTH; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TENSILE STRESS;

AMORPHOUS FILMS;

EID: 77649214677     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.096101     Document Type: Article

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