Spectroscopic ellipsometry and photoluminescence measurements of as-deposited and annealed silicon rich oxynitride films

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4342-4350

  Kohli, Sandeep ^a   Theil, Jeremy A ^b   McCurdy, Patrick R ^a   Dippo, Patricia C ^c   Ahrenkiel, Richard K ^c,d   Rithner, Christopher D ^a   Dorhout, Peter K ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

^b Philips Lumileds Lighting Company   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d Department of Metallurgical and Materials Engineering   (United States)

Author keywords

Photo luminescence; Silicon rich oxynitride; Spectroscopic ellipsometry

Indexed keywords

DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY;

AS-DEPOSITED FILMS; HIGH TEMPERATURE ANNEALING; OXYNITRIDE FILMS; SILICON RICH OXYNITRIDE;

OXIDE FILMS;

EID: 40849146878     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.119     Document Type: Article

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