Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating

Solid-State Electronics

Volumn 53, Issue 9, 2009, Pages 940-943

  Wang, Chi Yu ^a   Hsu, Jin Cheng ^b   Shiao, Hung Pin ^c  

^a VANUNG UNIVERSITY   (Taiwan)

^b FU JEN CATHOLIC UNIVERSITY   (Taiwan)

^c DA YEH UNIVERSITY   (Taiwan)

Author keywords

AlGaInAs; DFB laser; MQWs; Silicon oxynitride

Indexed keywords

ALGAINAS; ALGAINAS MQW; AR COATINGS; DFB LASER; DFB LASER DIODES; EYE DIAGRAMS; FACET COATING; HIGH SLOPE EFFICIENCY; LOW THRESHOLD CURRENT; MQWS; OPERATIONAL RANGE; SIDE MODE SUPPRESSION RATIOS; SILICON OXYNITRIDE; SINGLE LAYER; SION FILM; SLOPE EFFICIENCIES; TEMPERATURE PERFORMANCE; TEMPERATURE RANGE;

LADDER NETWORKS; LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67651121681     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.05.004     Document Type: Article

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