Effect of composition inhomogeneity in a-SiOxNy thin films on their optical properties

Optical Materials

Volumn 31, Issue 3, 2009, Pages 510-513

  Rebib, Farida ^a,b   Tomasella, Eric ^a   Micheli, Victor ^b   Eypert, Celine ^c   Cellier, Joel ^a   Laidani, Nadhira ^b  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b ITC IRST   (Italy)

^c HORIBA Jobin Yvon Inc   (United States)

Author keywords

a SiOxNy; Auger profiling; Ellipsometry; Reactive sputtering; UV visible

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; AUGERS; ELLIPSOMETRY; NITRIDES; REACTIVE SPUTTERING; REFRACTIVE INDEX; SILICON NITRIDE; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS;

A-SIOXNY; AUGER PROFILING; COMPOSITION INHOMOGENEITY; ELEMENTAL COMPOSITIONS; INTERFACE INHOMOGENEITY; OXYGEN CONCENTRATIONS; TRANSMISSION SPECTRUMS; UV-VISIBLE;

OPTICAL FILMS;

EID: 57249094313     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2007.10.025     Document Type: Article

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