Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire

Ultramicroscopy

Volumn 111, Issue 1, 2010, Pages 73-78

  Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Atomic force microscopy; Gallium nitride; Scanning capacitance microscopy; Unintentional doping

Indexed keywords

DOPANT SPECIES; GAN EPITAXIAL LAYERS; GASEOUS IMPURITIES; INCLINED FACETS; MOVPE; N-TYPE DOPING; SCANNING CAPACITANCE MICROSCOPY; THREE-DIMENSIONAL ISLAND GROWTH; UNINTENTIONAL DOPING;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SCANNING;

DOPING (ADDITIVES);

GALLIUM NITRATE; SILICON;

ACCURACY; ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CONTROLLED STUDY; DENSITY GRADIENT; IMAGE ANALYSIS; IMAGE QUALITY; LIGHT EMITTING DIODE; SEMICONDUCTOR; VALIDATION PROCESS;

EID: 78649444384     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.10.008     Document Type: Article

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