Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 11, 2007, Pages 4101-4105

  Yoon, Ahnsook ^a   Hong, Woong Ki ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Dielectrophoresis; Polymer gate dielectrics; ZnO nanowire

Indexed keywords

DEVICE CONFIGURATIONS; DIELECTROPHORESIS (DEP); ELECTRICAL CHARACTERISTICS; ELECTRICAL CHARACTERIZATIONS; GATE DIELECTRIC LAYERS; NANO WIRES; POLYMER GATE DIELECTRICS; POLYVINYLPHENOL (PVP); SOURCE AND DRAIN ELECTRODES; THIN LAYERING; ZNO NANOWIRE; ZNO NANOWIRES;

DIELECTRIC MATERIALS; ELECTRIC WIRE; ELECTROPHORESIS; GATE DIELECTRICS; GATES (TRANSISTOR); MESFET DEVICES; METALLIZING; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; PHOTOACOUSTIC EFFECT; POLYMERS; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; TRANSISTORS; ZINC ALLOYS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; POLYMER; ZINC OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; POLYMERS; TRANSISTORS; ZINC OXIDE;

EID: 38449107440     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.011     Document Type: Conference Paper

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