Electrochemical and optical characterizations of anodic porous n-InP(1 0 0) layers

Electrochimica Acta

Volumn 56, Issue 2, 2010, Pages 878-888

  Santinacci, Lionel ^a,b   Gonalves, Anne Marie ^a   Simon, Nathalie ^a   Etcheberry, Arnaud ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Anodic films; III V semiconductors; Nanostructured materials; Photoelectrochemistry; Porous materials

Indexed keywords

ABSORPTION COEFFICIENTS; ABSORPTION EDGES; ANODIC FILMS; CHARGE RECOMBINATIONS; ELECTROACTIVE-AREA; ELECTROCHEMICAL METHODS; FULLY DEPLETED; II-IV SEMICONDUCTORS; IMPEDANCE SPECTROSCOPY; INITIAL VALUES; INP; INTERFACIAL CAPACITANCE; MODEL-BASED; MOTT-SCHOTTKY ANALYSIS; NANO-STRUCTURED; NANOSIZED PORES; OPTICAL CHARACTERIZATION; OPTICAL PATH LENGTHS; OPTICAL TECHNIQUE; PHOTO-ELECTROCHEMISTRY; PHOTOCURRENT RESPONSE; PHOTOCURRENT SPECTROSCOPY; PHOTOCURRENT SPECTRUM; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE PEAK; PORE FORMATION; PORE MORPHOLOGY; PORE WALL; POROUS ELECTRODES; POROUS FILM; POROUS LAYERS; POROUS MATRIXS; POROUS SAMPLES; RED SHIFT; SPACE CHARGE LAYERS; SURFACE STATE; TRANSIT TIME;

ABSORPTION; CAPACITANCE; CYCLIC VOLTAMMETRY; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ELECTROCHEMICAL PROPERTIES; METALLIC FILMS; NANOSTRUCTURED MATERIALS; PASSIVATION; PHOTOCURRENTS; PHOTOLUMINESCENCE; PORE PRESSURE; POROUS MATERIALS; QUAY WALLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78449308178     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.09.031     Document Type: Article

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