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Journal of Solid State Electrochemistry

Volumn 14, Issue 7, 2010, Pages 1177-1184

Morphology-to-properties correlations in anodic porous InP layers

(4) Santinacci, Lionel a Gonçalves, Anne Marie a Bouttemy, Muriel a Etcheberry, Arnaud a

a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES (France)

Author keywords

Anodic films; III V semiconductors; Nanostructured materials; Porous materials

Indexed keywords

ABSORPTION EDGES; ANODIC FILMS; BAND GAPS; BULK SEMICONDUCTORS; CAPACITIVE CURRENTS; ELECTROCHEMICAL CHARACTERIZATIONS; ELECTROCHEMICAL MEASUREMENTS; ELECTRONIC DISTRIBUTION; II-IV SEMICONDUCTORS; IN-SITU; INP; MODEL-BASED; PHOTOCURRENT SPECTRUM; PORE GROWTH; PORE MORPHOLOGY; POROUS INP; POROUS LAYERS; POROUS STRUCTURES; RED SHIFT; SURFACE STATE; SURFACE-ROUGHENING;

ABSORPTION; ELECTROCHEMICAL PROPERTIES; METALLIC FILMS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; POROUS MATERIALS; SEMICONDUCTOR GROWTH;

SURFACES;

EID: 77952243110 PISSN: 14328488 EISSN: None Source Type: Journal
DOI: 10.1007/s10008-009-0942-y Document Type: Article

Times cited : (3)

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