Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching

Applied Physics Letters

Volumn 69, Issue 15, 1996, Pages 2246-2248

  Van De Lagemaat, J ^a   Plakman, M ^a   Vanmaekelbergh, D ^a   Kelly, J J ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006501449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117142     Document Type: Article

References (11)

1. J. S. Shor, I. Grimberg, B.-Z. Weiss, and A. D. Kurtz, Appl. Phys. Lett. 62, 2836 (1993).
2. T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, and H. Mimura, Appl. Phys. Lett. 64, 226 (1994).
3. A. O. Konstantinov, C. I. Harris, and E. Janzén, Appl. Phys. Lett. 65, 2699 (1994).
4. A. O. Konstantinov, A. Henry, C. I. Harris, and E. Janzén, Appl. Phys. Lett. 66, 2250 (1995).
5. B. H. Erné, D. Vanmaekelbergh, and J. J. Kelly, Adv. Mater. 7, 739 (1995).
6. B. H. Erné, D. Vanmaekelbergh, and J. J. Kelly, J. Electrochem. Soc. 143, 305 (1996).
7. B. E. Wheeler, Solid State Commun. 4, 173 (1996).
8. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
9. W. J. Choyke and L. Patrick, Phys. Rev. 172, 769 (1968).
10. H. R. Philipp, Phys. Rev. 111, 440 (1958).
11. F. Iranzo-Marín, M. A. Hamstra, and D. Vanmaekelbergh, J. Electrochem. Soc. 143, 1137 (1996).