Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Thin Solid Films

Volumn 519, Issue 4, 2010, Pages 1325-1333

  Dupuis, J ^a   Fourmond, E ^a   Ballutaud, D ^b   Bererd, N ^c   Lemiti, M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CNRS   (France)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

ERDA; FTIR; SiON; Solar cells; Surface passivation; XPS

Indexed keywords

ANTIREFLECTION COATINGS; BOND STRENGTH (CHEMICAL); DIELECTRIC FILMS; FLOW OF GASES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; NITRIDES; OXYGEN; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; PLASMA CVD; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SILICON NITRIDE; SILICON OXIDES; SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ERDA; FTIR; PHOTOVOLTAIC APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); SION; SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS; SURFACE PASSIVATION; SURFACE PASSIVATION EFFECTS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 78349308945     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.09.036     Document Type: Article

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