A critical review of growth of low-dimensional carbon nanostructures on SiC (0001): Impact of growth environment

Journal of Physics D: Applied Physics

Volumn 43, Issue 37, 2010, Pages

  Lu, Weijie ^a   Boeckl, John J ^b   Mitchel, William C ^b  

^a FISK UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED CNTS; CARBON NANOSTRUCTURES; CARBON-BASED NANOSTRUCTURES; CHEMICAL DECOMPOSITION; CRITICAL PARAMETER; CRITICAL REVIEW; ELECTRONIC DEVICE; GAS COMPOSITIONS; GRAPHENE GROWTH; GRAPHITIZATION PROCESS; GROWTH MECHANISMS; GROWTH PROCESS; INTERFACE STRUCTURES; MODEL SYSTEM; OVERLAPPING TEMPERATURE; PRESSURE RANGES; RESIDUAL GAS; SIC(0 0 0 1); STRUCTURAL QUALITIES; TECHNICAL CHALLENGES;

CARBON NANOTUBES; DECOMPOSITION; GRAPHENE; GRAPHITE; GRAPHITIZATION; GROWTH TEMPERATURE; NANOSTRUCTURES; SULFUR COMPOUNDS;

SILICON CARBIDE;

EID: 78249240332     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374004     Document Type: Review

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