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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1717-1721

Preparation of silicon-on-insulator substrate on large free-standing carbon nanotube film formation by surface decomposition of SiC film

(3) Nagano, Takayuki a Ishikawa, Yukari a Shibata, Noriyoshi a

a JAPAN FINE CERAMICS CENTER (Japan)

Author keywords

Carbon; Chemical vapor deposition; Decomposition; Graphite; Nanotube; Orientation; SiC; Silicon on insulator

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRACK PROPAGATION; CRYSTAL ORIENTATION; ETCHING; PYROLYSIS; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILMS;

ALTERNATING GAS SUPPLY; CARBON NANOTUBE FILM; SILICON CARBIDE FILM; SILICON ON INSULATOR SUBSTRATE; SILICON OVERLAYER;

CARBON NANOTUBES;

EID: 0037931980 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.1717 Document Type: Article

Times cited : (8)

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