Structural evaluation of graphene/SiC (0001) grown in atmospheric pressure

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 573-576

  Boeckl, John ^a   Mitchel, W C ^a   Clarke, Edwina ^b   Barbosa, Roland L ^b   Lu, Weijie ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b FISK UNIVERSITY   (United States)

Author keywords

And growth mechanism; Graphene growth; SiC

Indexed keywords

ATMOSPHERIC PRESSURE; MORPHOLOGY; SILICON CARBIDE; SUBSTRATES;

DISORDERED STRUCTURES; GRAPHENE GROWTH; GROWTH CHAMBER; GROWTH MECHANISMS; SIC SUBSTRATES; STRUCTURAL EVALUATION; SUBSTRATE SURFACE; SURFACE PREPARATION;

GRAPHENE;

EID: 77955451251     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.573     Document Type: Conference Paper

References (4)

1. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer: Science Vol. 312 (2006), p. 1191 doi:10.1126/science.1125925 PMid:16614173. (Pubitemid 43801140)
2. K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Rohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and Th. Seyller: Nature Materials Vol. 8 (2009), p. 203 doi:10.1038/nmat2382 PMid:19202545.
3. Th. Seyller, K. V. Emtsev, K. Gao, F. Speck, L. Ley, A. Tadich, L. Broekman, J. D. Riley, R. C. G. Leckey, O. Rader, A. Varykhaloc, and A. M. Shikin: Surf. Sci. Vol. 600 (2006), p. 3906 doi:10.1016/j.susc.2006.01.102. (Pubitemid 44467922)
4. V. Derycke, R. Martel, M. Radosavljevic, F. M. Ross, and Ph. Avouris: Nano Letters Vol. 2 (2002), p. 1043 doi:10.1021/nl0256309. (Pubitemid 135706463)