Room-temperature preparation of high-transparency low-resistivity ITO films by ion beam sputtering

Journal of Electronic Materials

Volumn 39, Issue 10, 2010, Pages 2352-2358

  Shen, Jung Hsiung ^a   Yeh, Sung Wei ^a   Gan, Dershin ^a   Yang, Koho ^b   Huang, Hsing Lu ^c   Mao, Shih Wei ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c DEPARTMENT OF PHYSICS   (Taiwan)

Author keywords

Ion beam sputtering (IBS); Resistivity; Tin doped In 2O 3 (ITO); Transparency

Indexed keywords

ELECTRICAL RESISTANCES; HALL MEASUREMENTS; HIGH TRANSPARENCY; ION-BEAM SPUTTERING; ITO FILMS; LOW TEMPERATURES; RADIO FREQUENCIES; RESISTIVITY; ROOM TEMPERATURE; SHEET RESISTIVITY; TRANSPARENT CONDUCTING ELECTRODES; VISIBLE LIGHT;

BEAM PLASMA INTERACTIONS; CARRIER CONCENTRATION; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; ION BEAMS; ION BOMBARDMENT; IONS; OPTOELECTRONIC DEVICES; SPUTTERING; TIN; TRANSPARENCY;

FILM PREPARATION;

EID: 78149414744     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1328-8     Document Type: Article

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