High rate deposition of tin-doped indium oxide films by reactive magnetron sputtering with unipolar pulsing and plasma emission feedback systems

Science and Technology of Advanced Materials

Volumn 7, Issue 1 SPEC. ISS., 2006, Pages 56-61

  Ohno, S ^a,b   Kawaguchi, Y ^a   Miyamura, A ^a   Sato, Y ^a   Song, P K ^a   Yoshikawa, M ^b   Frach, P ^c   Shigesato, Y ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b BRIDGESTONE CORPORATION   (Japan)

^c Fraunhofer Institute for Electron Beam and Plasma Technology   (Germany)

Author keywords

Plasma emission; Reactive sputtering; Tin doped indium oxide (ITO); Transition region; Transparent conductive oxide (TCO); Unipolar pulsing

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); GLASS; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; PLASMAS; TIN;

REACTIVE SPUTTERING; TIN-DOPED INDIUM OXIDE (ITO); TRANSITION REGION; TRANSPARENT CONDUCTIVE OXIDE (TCO); UNIPOLAR PULSING;

THIN FILMS;

EID: 33344470938     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2005.11.005     Document Type: Article

References (28)

1. 3 films: basic optical properties and applications to energy-efficient windows J. Appl. Phys. 60 1986 123 159
2. Y. Shigesato, I. Yasui, and D.C. Paine ITO thin-film transparent conductors: microstructure and processing TMS Mont. Bull. (JOM) March 1995 47 50
3. H. Odaka, S. Iwata, N. Taga, S. Ohnishi, Y. Kaneta, and Y. Shigesato Study on electronic structure and optoelectronic properties of indium oxide by first-principles calculations Jpn. J. Appl. Phys. 36 1997 5551 5554
4. 3 Jpn. J. Appl. Phys. 40 2001 3231 3235
5. T. Tsutsui, Present status of research and development in organic electroluminescent devices, Oyobuturi 66 (1997) 109-116 (in Japanese).
6. H. Kobayashi, Y. Ishida, Y. Nakato, and H. Tsubomura Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions J. Appl. Phys. 69 1991 1736 1743
7. S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura Low resistivity indium-tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films J. Vac. Sci. Technol. A8 1990 1403 1406
8. Y. Shigesato, S. Takaki, and T. Haranoh Electrical and structural properties of low resistivity tin-doped indium oxide films J. Appl. Phys. 71 1992 3356 3364
9. Y. Shigesato, and D.C. Paine Study of the effect of Sn doping on the electronic transport properties of thin film indium oxide Appl. Phys. Lett. 62 1993 1268 1270
10. Y. Shigesato, I. Yasui, Y. Hayashi, S. Takaki, T. Oyama, and M. Kamei Effects of water partial pressure on the activated electron beam evaporation process to deposit tin-doped indium-oxide films J. Vac. Sci. Technol. A13 1995 268 275
11. Y. Shigesato, S. Takaki, and T. Haranoh Crystallinity and electrical properties of tin-doped indium oxide films deposited by DC magnetron sputtering Appl. Surf. Sci. 48/49 1991 269 275
12. Y. Shigesato, and D.C. Paine A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputtering Thin Solid Films 238 1994 44 50
13. P.K. Song, Y. Shigesato, I. Yasui, C.W. Ow-Yang, and D.C. Paine Study on crystallinity of tin-doped indium oxide films deposited by dc magnetron sputtering Jpn. J. Appl. Phys. 37 1998 1870 1875
14. P.K. Song, Y. Shigesato, M. Kamei, and I. Yasui Electrical and structural properties of tin-doped indium oxide films deposited by dc sputtering at room temperature Jpn. J. Appl. Phys. 38 1999 2921 2927
15. S. Berg, T. Larsson, C. Nender, and H.O. Blom Predicting thin-film stoichiometry in reactive sputtering J. Appl. Phys. 63 1988 887 891
16. R.P. Howson, A.G. Spencer, K. Oka, and R.W. Lewin The formation and control of direct current magnetron discharges for the high-rate reactive processing of thin films J. Vac. Sci. Technol. A7 1989 1230 1234
17. S. Sciller, U. Heisig, C. Korndorfer, G. Beister, J. Reschke, K. Steinfelder, and J. Strumpfel Reactive d.c. high-rate sputtering as production technology Surf. Coat. Technol. 33 1987 405 423
18. S. Berg, T. Larsson, and H.O. Blom The use of nitrogen flow as a deposition rate control in reactive sputtering J. Vac. Sci. Technol. A4 1986 594 597
19. S. Inoue, K. Tominaga, R.P. Howson, and K. Kusaka Effects of nitrogen pressure and ion flux on the properties of direct current reactive magnetron sputtered Zr-N films J. Vac. Sci. Technol. A13 1995 2808 2813
20. R. Dannenberg, and P. Greene Reactive sputter deposition of titanium dioxide Thin Solid Films 360 2000 122 127
21. M. Kon, P.K. Song, Y. Shigesato, P. Frach, A. Mizukami, and K. Suzuki Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes Jpn. J. Appl. Phys. 41 2002 814 819
22. 2 films Thin Solid Films 445 2003 207 212
23. M. Kon, P.K. Song, Y. Shigesato, P. Frach, and S. Ohno Impedance control of reactive sputtering process in mid-frequency mode with dual cathodes to deposit Al-doped ZnO films K. Suzuki, Jpn. J. Appl. Phys. 42 2003 263 269
24. 119Sn Mössbauer spectroscopy and X-ray diffraction Jpn. J. Appl. Phys. 38 1999 2856 2862
25. 119Sn Mössbauer spectroscopy and Hall effect measurements Jpn. J. Appl. Phys. 39 2000 4158 4163
26. 3 films Thin Solid Films 59 1979 255 261
27. C.H. Yi, Y. Shigesato, I. Yasui, and S. Takaki Microstructure of low-resistivity tin-doped indium oxide films deposited at 150-200 °C Jpn. J. Appl. Phys. 34 1995 L244 L247
28. J.E.A.M. van den Meerakker, P.C. Baarslag, W. Walrave, T.J. Vink, and J.L.C. Daams On the homogeneity of sputter-deposited ITO films Part II. Etching behaviour Thin Solid Films 266 1995 152 156