Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 225-229

  Shin, S H ^a   Shin, J H ^a   Park, K J ^a   Ishida, T ^b   Tabata, O ^b   Kim, H H ^c  

^a National Institute of Technology and Quality   (South Korea)

^b OSAKA NATIONAL RESEARCH INSTITUTE   (Japan)

^c Doowon Institute of Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; GLASS; INDIUM COMPOUNDS; LIME; MAGNETRON SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS; TEMPERATURE; X RAY DIFFRACTION;

DIRECT CURRENT MAGNETRON SPUTTERING; FILM UNIFORMITY; HALL MOBILITY; INDIUM TIN OXIDE THIN FILMS; SODA LIME GLASS; SUBSTRATE TEMPERATURE; X RAY DIFFRACTION METER;

THIN FILMS;

EID: 0032682291     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01531-4     Document Type: Article

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