Chemical changes of ITO/p and ZnO/p interfaces as a function of deposition parameters

Surface and Coatings Technology

Volumn 110, Issue 1-2, 1998, Pages 68-72

  Martinez M A ^a   Gutierrez M T ^a   Maffiotte, C ^a  

^a CIEMAT   (Spain)

Author keywords

A Si:H deposition parameters; ITO p and ZnO p interfaces

Indexed keywords

AMORPHOUS SILICON; CRYSTAL LATTICES; DECOMPOSITION; MAGNETRON SPUTTERING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REDUCTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SILANES; SPUTTER DEPOSITION; ZINC OXIDE;

INDIUM TIN OXIDE; TRANSPARENT CONDUCTIVE OXIDES (TCO);

HETEROJUNCTIONS;

EID: 0032204433     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00673-2     Document Type: Article

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