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Volumn 4, Issue 10, 2010, Pages 5985-5993

InAs quantum dot arrays decorating the facets of GaAs nanowires

Author keywords

epitaxy; nanowires; optical properties; quantum dots; solar cells

Indexed keywords

ATOMIC FORCE; CATALYST-FREE METHOD; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EPITAXY; GAAS NANOWIRES; HETEROSTRUCTURES; INAS QUANTUM DOTS; LINE SCAN; LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY; PHOTOVOLTAICS; QUANTUM DOT; SINGLE NANOWIRES; SINGLE-PHOTON SOURCE; THIRD GENERATION; ULTRA-THIN;

EID: 78049349255     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn101604k     Document Type: Article
Times cited : (104)

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