Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4750-4752

  Bauer, J ^a   Schuh, D ^a   Uccelli, E ^a   Schulz, R ^a   Kress, A ^a   Hofbauer, F ^a   Finley, J J ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PRECISION; QUANTUM DOT NUCLEATION; SPATIALLY RESOLVED SPECTROSCOPY; SUPERLATTICE;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 10944269093     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819987     Document Type: Article

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