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Volumn 83, Issue 8, 1998, Pages 4168-4172

InGaAs island shapes and adatom migration behavior on (100), (110), (111), and (311) GaAs surfaces

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0005033497     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367170     Document Type: Article
Times cited : (64)

References (26)
  • 25
    • 85034301089 scopus 로고    scopus 로고
    • The difference between the determined diffusion lengths on the (100) surfaces can be taken as a measure of the error that steps introduce into the calculated diffusion lengths on these other orientations
    • The difference between the determined diffusion lengths on the (100) surfaces can be taken as a measure of the error that steps introduce into the calculated diffusion lengths on these other orientations.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.