Unpinned Interface between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In 0.53Ga0.47As (001)

Electrochemical and Solid-State Letters

Volumn 12, Issue 8, 2009, Pages

  Shin, Byungha ^a   Cagnon, Jol ^b   Long, Rathnait D ^a,c   Hurley, Paul K ^c   Stemmer, Susanne ^b   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b University of California   (United States)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CAPACITANCE VOLTAGE MEASUREMENTS; GATE DIELECTRIC LAYERS; TEMPERATURE DEPENDENT;

ALUMINUM; ATOMS; FERMI LEVEL; FERMIONS; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; SURFACE CHEMISTRY; THERMAL DESORPTION;

ATOMIC LAYER DEPOSITION;

EID: 67649213322     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3139603     Document Type: Article

References (16)

1. B. Shin, D. Choi, J. S. Harris, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951, 93, 052911 (2008). 10.1063/1.2966357
2. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 0003-6951, 93, 033516 (2008) 10.1063/1.2956393; K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong, and J. Kwo, Appl. Phys. Lett. 0003-6951, 92, 252908 (2008) 10.1063/1.2952826; I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, D. Garcia, P. Majhi, N. Goel, Appl. Phys. Lett. 0003-6951, 92, 202903 (2008) 10.1063/1.2920438; E. O'Connor, R. D. Long, K. Cherkaoui, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley, B. Brennan, G. Hughes, Appl. Phys. Lett. 0003-6951, 92, 022902 (2008) 10.1063/1.2829586; Y. Xuan, P. D. Ye, and T. Shen, Appl. Phys. Lett. 0003-6951, 91, 232107 (2007) 10.1063/1.2822892; F. S. Aguirre-Tostado, M. Milojevic, C. L. Hinkle, E. M. Vogel, R. M. Wallace, S. McDonnell, and G. J. Hughes, Appl. Phys. Lett. 0003-6951, 92, 171906 (2008) 10.1063/1.2919047; Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. 0003-6951, 88, 263518 (2006) 10.1063/1.2217258; M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. 0003-6951, 87, 252104 (2005) 10.1063/1.2146060; N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi, and J. S. Harris, Appl. Phys. Lett. 0003-6951, 89, 163517 (2006) 10.1063/1.2363959; S. Koveshnikov, C. Adamo, V. Tokranov, M. Yakimov, R. Kambhampati, M. Warusawithana, D. G. Schlom, W. Tsai, and S. Oktyabrsky, Appl. Phys. Lett. 0003-6951, 93, 012903 (2008) 10.1063/1.2952830; H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, Appl. Phys. Lett. 0003-6951, 93, 202903 (2008). 10.1063/1.3027476
3. S. Koveshnikov, N. Goel, P. Majhi, H. Wen, M. B. Santos, S. Oktyabrsky, V. Tokranov, R. Kambhampati, R. Moore, F. Zhu, Appl. Phys. Lett. 0003-6951, 92, 222904 (2008). 10.1063/1.2931031
4. R. Suri, D. J. Lichtenwalner, and V. Misra, Appl. Phys. Lett. 0003-6951, 92, 243506 (2008). 10.1063/1.2949079
5. D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951, 92, 223501 (2008) 10.1063/1.2937404; Y. Xuan, H. C. Lin, and P. D. Ye, IEEE Trans. Electron Devices 0018-9383, 54, 1811 (2007) 10.1109/TED.2007.900678; C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, Appl. Phys. Lett. 0003-6951, 91, 163512 (2007) 10.1063/1.2801512; C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, Appl. Phys. Lett. 0003-6951, 92, 071901 (2008). 10.1063/1.2883956
6. A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, Appl. Phys. Lett. 0003-6951, 54, 332 (1989) 10.1063/1.100961; S. Oktyabrsky, V. Tokranov, M. Yakimov, R. Moore, S. Koveshnikov, W. Tsai, F. Zhu, and J. C. Lee, Mater. Sci. Eng., B 0921-5107, 135, 272 (2006). 10.1016/j.mseb.2006.08.018
7. G. Cossu, G. M. Ingo, G. Mattogno, G. Padeletti, and G. M. Proietti, Appl. Surf. Sci. 0169-4332, 56-58, 81 (1992). 10.1016/0169-4332(92)90219-N
8. M. Milojevic, F. S. Aguirre-Tostado, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951, 93, 202902 (2008). 10.1063/1.3033404
9. M. Dalcolle, R. Bertoncello, and E. Tondello, J. Electron Spectrosc. Relat. Phenom. 0368-2048, 70, 129 (1994). 10.1016/0368-2048(94)02221-K
10. Note that a fresh device was used for each temperature, and consequently, a portion of the observed dispersion should be attributed to the device-to-device variation, as supported by the fact that accumulation capacitance at 25°C is smaller than that at -40 to 0°C. The true dispersion would therefore be even smaller.
11. E. O'Connor, S. Monaghan, R. D. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, and P. K. Hurley, Appl. Phys. Lett., 94, 102902 (2009). 10.1063/1.3089688
12. G. Brammertz, K. Martens, S. Sioncke, A. Delabie, M. Caymax, M. Meuris, and M. Heyns, Appl. Phys. Lett. 0003-6951, 91, 133510 (2007). 10.1063/1.2790787
13. A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Appl. Phys. Lett. 0003-6951, 86, 223507 (2005). 10.1063/1.1944227
14. Y. Xuan, P. D. Ye, H. C. Lin, and G. D. Wilk, Appl. Phys. Lett. 0003-6951, 89, 132103 (2006). 10.1063/1.2357566
15. C. N. Berglund, IEEE Trans. Electron Devices 0018-9383, 10, 701 (1966). 10.1109/T-ED.1966.15827
16. B. Shin, R. D. Long, P. K. Hurley, and P. C. McIntyre, Unpublished.