Real space surface reconstructions of decapped As-rich in 0.53Ga0.47As(001)-(2×4)

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 463-468

  Shen, Jian ^a,b   Winn, Darby ^b   Melitz, Wilhelm ^a,b   Clemens, Jonathon ^b   Kummel, Andrew C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; DIELECTRIC DEVICES; GALLIUM ARSENIDE; GATE DIELECTRICS; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SURFACE RECONSTRUCTION;

DENSITY FUNCTION THEORY; GAAS(001); HETERO DIMERS; IN0.53GA0.47AS; INTERMEDIATE ANNEALINGS;

GALLIUM ALLOYS;

EID: 63149177551     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981627     Document Type: Conference Paper

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