Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3754-3756

  Collins, C J ^a   Chowdhury, U ^a   Wong, M M ^a   Yang, B ^a   Beck, A L ^a   Dupuis, R D ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION REGION; DETECTIVITY; DIFFERENTIAL RESISTANCES; EXTERNAL QUANTUM EFFICIENCY; HIGH QUANTUM EFFICIENCY; MATERIAL QUALITY; PIN PHOTODIODE; REVERSE BIAS; SOLAR-BLIND; ZERO-BIAS;

ALUMINUM; EFFICIENCY; GALLIUM; HETEROJUNCTIONS; PHOTODIODES;

QUANTUM EFFICIENCY;

EID: 79956010143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480484     Document Type: Article

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