GaN-based MSM photodetectors prepared on patterned sapphire substrates

IEEE Photonics Technology Letters

Volumn 20, Issue 22, 2008, Pages 1866-1868

  Chang, Shoou Jinn ^a   Jhou, Y D ^a   Lin, Y C ^a   Wu, S L ^b   Chen, C H ^b   Wen, T C ^c   Wu, L W ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c Formosa Epitaxy Incorporation   (Taiwan)

Author keywords

Internal gain; Metal semiconductor metal (MSM); Patterned sapphire substrate (PSS); Photodetector (PD); Threading dislocation (TD)

Indexed keywords

CORUNDUM; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

INTERNAL GAIN; MSM PHOTODETECTORS; ORDERS OF MAGNITUDES; PATTERNED SAPPHIRE SUBSTRATE (PSS); PATTERNED SAPPHIRE SUBSTRATES; SAPPHIRE SUBSTRATES; SEMI-CONDUCTORS; THREADING DISLOCATION (TD); ULTRAVIOLET PHOTODETECTORS;

SUBSTRATES;

EID: 56049120808     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004814     Document Type: Article

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