A-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit simulation

Journal of the Society for Information Display

Volumn 17, Issue 6, 2009, Pages 525-534

  Chen, Charlene ^a   Abe, Katsumi ^b   Kumomi, Hideya ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b CANON INC   (Japan)

Author keywords

Active matrix organic light emitting display (AMOLED); Amorphous in Ga Zn O (a InGaZnO); Current temperature stress (CTS); Thin film transistor (TFT)

Indexed keywords

ACTIVE MATRIXES; AM-OLED; AMOLEDS; BIASING CONDITIONS; CURRENT TEMPERATURE STRESS; ELECTRICAL STABILITY; EXPERIMENTAL DATA; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; ORGANIC LIGHT-EMITTING; PIXEL CIRCUIT; STRESS CURRENT; STRESS TEMPERATURE; SUBTHRESHOLD SLOPE;

AMORPHOUS FILMS; CIRCUIT SIMULATION; GALLIUM; GALLIUM ALLOYS; LIGHT EMISSION; PIXELS; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL EFFECTS; THIN FILM DEVICES; TIMING CIRCUITS; TRANSISTORS; ZINC;

THIN FILM TRANSISTORS;

EID: 72149108409     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID17.6.525     Document Type: Article

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