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Volumn 266-269 B, Issue , 2000, Pages 1315-1319
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Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000574573
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/s0022-3093(99)00943-6 Document Type: Article |
Times cited : (25)
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References (15)
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