Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode

Journal of the American Chemical Society

Volumn 132, Issue 41, 2010, Pages 14429-14436

  Ramesh, Palanisamy ^a   Itkis, Mikhail E ^a   Bekyarova, Elena ^a   Wang, Feihu ^a   Niyogi, Sandip ^a   Chi, Xiaoliu ^a,c   Berger, Claire ^b,d   De Heer, Walt ^b   Haddon, Robert C ^a  

^a University of California ^*  (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c TEXAS A AND M UNIVERSITY   (United States)

^d LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTROCHEMICAL OXIDATION; ELECTRODES; ELECTRONIC PROPERTIES; ELECTROOXIDATION; ENERGY GAP; GATES (TRANSISTOR); GRAPHENE; GRAPHENE TRANSISTORS; INTERNAL OXIDATION; REFRACTORY METAL COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; TRANSISTORS; YARN;

ADDITIONAL REACTIONS; CARBON-CARBON BOND FORMATION; COVALENT CHEMISTRY; DEVICE PERFORMANCE; GRAPHENE FIELD-EFFECT TRANSISTORS; OXIDATIVE CHEMISTRY; SILICON CARBIDE SUBSTRATES; TRANSISTOR PERFORMANCE;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; GRAPHENE; GRAPHITE; NITRIC ACID; SILICON CARBIDE; SINGLE WALLED NANOTUBE;

ADDITION REACTION; ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL BOND; ELECTRIC RESISTANCE; ELECTROCHEMICAL ANALYSIS; ELECTRODE; ENERGY; FIELD EFFECT TRANSISTOR; FILM; OXIDATION; RAMAN SPECTROMETRY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 77958035337     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja101706j     Document Type: Article

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