Probing epitaxial growth of graphene on silicon carbide by metal decoration

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Poon, Siew Wai ^a   Chen, Wei ^a   Tok, Eng Soon ^a   Wee, Andrew T S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DECORATION; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SEPARATION; SILICON CARBIDE;

GRAPHENE; GRAPHENE GROWTH; INTERLAYER SEPARATION; METAL DECORATION;

GRAPHITE;

EID: 40849106719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2883941     Document Type: Article

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