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Volumn 13, Issue 40, 2001, Pages 8989-8999

The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRON TRAPS; GALLIUM NITRIDE; ION BOMBARDMENT; IRRADIATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS;

EID: 0035828725     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/40/315     Document Type: Article
Times cited : (59)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.