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Volumn 13, Issue 40, 2001, Pages 8989-8999
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The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARACTERIZATION;
CRYSTAL DEFECTS;
ELECTRIC PROPERTIES;
ELECTRON TRAPS;
GALLIUM NITRIDE;
ION BOMBARDMENT;
IRRADIATION;
LEAKAGE CURRENTS;
SCHOTTKY BARRIER DIODES;
SINGLE CRYSTALS;
HIGH ENERGY PROTON BOMBARDMENT;
REVERSE LEAKAGE CURRENT;
WURZITIC SEMICONDUCTOR MATERIAL;
ZINC OXIDE;
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EID: 0035828725
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/13/40/315 Document Type: Article |
Times cited : (59)
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References (23)
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